EC-I SERIES

The EC-I series provides state-of-the-art performance for various growth and deposition techniques including MBE, sputtering and CVD. The EC-I offers continuous substrate rotation, high temperature and high uniformity heating, DC/RF biasing, and facilities for substrate transfer, while maintaining true UHV compatibility.
The series includes models to accommodate SEMI standard wafers from 2″ to 200mm diameter. Special substrate cradles can be provided to accommodate specific substrate shapes and designs up to 200mm diameter.

The EC-I series benefits from the success of UHV Design’s unique hollow magnetic coupling technology using the CF38 mounted MagiLift drive. This single compact device provides magnetically-coupled substrate rotation and axial motion
to lift and lower substrates for transfer.
The hollow drive technology facilitates the passing of services through the drive to a stationary wafer heating module in close proximity to the substrate, eliminating the need for vulnerable high current rotational connections. The MagiLift provides continuous rotation of the substrate cradle, which supports the substrate, for better temperature and layer uniformity. It further provides a pneumatically actuated 25mm lift and lower for substrate transfer.

The stationary heater module employs multiple refractory metal Molybdenum heat shields to minimise heat loss, (Inconel and other materials available upon request), and a choice of either SiCg (SiC coated Graphite) or sSiC (solid SiC) heater elements, both of which are capable of heating wafers to 1200°C and operating within O2 rich environments

The electrically-isolated substrate cradle can be biased with either DC or RF to facilitate sputter cleaning prior to deposition or for better control of deposition kinetics. ‘Faraday Dark Space Shielding’ is supplied as standard on all biased stages. This confines plasma to the substrate cradle region. Our proprietary substrate biasing technology provides unrivalled flicker-free performance, typically with zero maintenance and long operational life.

The deposition height adjustment facility allows the Z position of the substrate to be adjusted to optimise the distance from the deposition flux.

The stages can be mounted in any-orientation, although they are most commonly mounted vertically with the wafer facing up or down and parallel to the mounting flange. Other orientations can be accommodated with special wafer holders. Options are also available to configure EpiCentres for higher pressure and corrosive environments.

The series has a full suite of options including choice of system mounting flanges, manual or pneumatic substrate shutters and thermocouple materials.